Page 1 of 4

FETek Technology Corp.

Data and specifications subject to change without notice.

www.fetek.com.tw Ver : A

FKS3014

N-Ch 30V Fast Switching MOSFETs

1

Symbol Parameter Rating Units

VDS Drain-Source Voltage 30 V

VGS Gate-Source Voltage ±20 V

ID@TA=25°C Continuous Drain Current, VGS @ 10V1 9 A

ID@TA=70°C Continuous Drain Current, VGS @ 10V1 7 A

IDM Pulsed Drain Current2 36 A

EAS Single Pulse Avalanche Energy3 24.2 mJ

IAS Avalanche Current 22 A

PD@TA=25°C Total Power Dissipation4 1.5 W

TSTG Storage Temperature Range -55 to 150 °C

TJ Operating Junction Temperature Range -55 to 150 °C

Symbol Parameter Typ. Max. Unit

RθJA Thermal Resistance Junction-Ambient 1

--- 85 °C/W

RθJC Thermal Resistance Junction-Case1

--- 25 °C/W

BVDSS RDSON ID

30V 12mΩ 9A

The FKS3014 is the high cell density trenched

N-ch MOSFETs, which provide excellent RDSON

and gate charge for most of the synchronous buck

converter applications.

The FKS3014 meet the RoHS and Green Product

requirement 100% EAS guaranteed with full

function reliability approved.

 100% EAS Guaranteed

 Green Device Available

 Super Low Gate Charge

 Excellent CdV/dt effect decline

 Advanced high cell density Trench

technology

Description

Absolute Maximum Ratings

Thermal Data

S0P8 Pin Configuration

Product Summary

Page 2 of 4

FETek Technology Corp.

Data and specifications subject to change without notice.

www.fetek.com.tw Ver : A

FKS3014

N-Ch 30V Fast Switching MOSFETs

2

Symbol Parameter Conditions Min. Typ. Max. Unit

BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V

△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25°C , ID=1mA --- 0.023 --- V/°C

RDS(ON) Static Drain-Source On-Resistance2

VGS=10V , ID=8A --- 10 12

m

VGS=4.5V , ID=6A --- 15 18

VGS(th) Gate Threshold Voltage

VGS=VDS , ID =250uA

1.2 1.5 2.5 V

△VGS(th) VGS(th) Temperature Coefficient --- -5.08 --- mV/°C

IDSS Drain-Source Leakage Current

VDS=24V , VGS=0V , TJ=25°C --- --- 1

uA

VDS=24V , VGS=0V , TJ=55°C --- --- 5

IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA

gfs Forward Transconductance VDS=5V , ID=8A --- 24 --- S

Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.8 3 

Qg Total Gate Charge (4.5V)

VDS=15V , VGS=4.5V , ID=8A

--- 9.63 13.5

Qgs Gate-Source Charge --- 3.88 5.4 nC

Qgd Gate-Drain Charge --- 3.44 4.8

Td(on) Turn-On Delay Time

VDD=15V , VGS=10V , RG=1.5

ID=8A

--- 4.2 8.4

ns

Tr Rise Time --- 8.2 15

Td(off) Turn-Off Delay Time --- 31 62

Tf Fall Time --- 4 8

Ciss Input Capacitance

VDS=15V , VGS=0V , f=1MHz

--- 940 1316

Coss Output Capacitance --- 131 183 pF

Crss Reverse Transfer Capacitance --- 109 153

Symbol Parameter Conditions Min. Typ. Max. Unit

IS Continuous Source Current1,5

VG=VD=0V , Force Current

--- --- 9 A

ISM Pulsed Source Current2,5

--- --- 36 A

VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25°C --- --- 1 V

trr Reverse Recovery Time

IF=8A , dI/dt=100A/μs , TJ=25°C

--- 8 --- nS

Qrr Reverse Recovery Charge --- 2.9 --- nC

Note :

1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=22A

4.The power dissipation is limited by 150°C junction temperature

5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

Electrical Characteristics (TJ=25 °C, unless otherwise noted)

Diode Characteristics

Page 3 of 4

FETek Technology Corp.

Data and specifications subject to change without notice.

www.fetek.com.tw Ver : A

FKS3014

N-Ch 30V Fast Switching MOSFETs

3

0

6

12

18

24

30

36

0 0.5 1 1.5 2 2.5 3

VDS , Drain-to-Source Voltage (V)

ID Drain Current (A)

VGS=10V

VGS=7V

VGS=5V

VGS=4.5V

VGS=3V

10

14

18

22

2 4 6 8 10 VGS (V)

RDSON (mΩ)

ID=8A

0

2

4

6

8

10

12

0 0.3 0.6 0.9 1.2

VSD , Source-to-Drain Voltage (V)

IS Source Current(A)

TJ=150°C TJ=25°C

0

2.5

5

7.5

10

0 5 10 15 20

QG , Total Gate Charge (nC)

VGS Gate to Source Voltage (V)

ID=8A

VDS=15V

0

0.5

1

1.5

-50 0 50 100 150

TJ

,Junction Temperature ( °C) Normalized VGS(th)

0.5

1.0

1.5

2.0

-50 0 50 100 150

TJ

, Junction Temperature (°C) Normalized On Resistance

Typical Characteristics

Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage

Fig.3 Forward Characteristics of Reverse

diode

Fig.4 Gate-Charge Characteristics

Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. TJ